| PART |
Description |
Maker |
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| CY14E108L-BA45XCT CY14E108N-BA45XCT CY14E108N-ZSP4 |
512K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48
512K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
512K X 16 NON-VOLATILE SRAM, 45 ns, PBGA48 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48
512K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
8 Mbit (1024K x 8/512K x 16) nvSRAM
|
Cypress Semiconductor, Corp.
|
| CY62158DV30LL-55ZXI CY62158DV30LL-70ZSXI CY62158DV |
8-Mbit (1024K x 8) MoBL Static RAM
8-Mbit (1024K x 8) MoBL Static RAM 1M X 8 STANDARD SRAM, 55 ns, PBGA48
8-Mbit (1024K x 8) MoBL Static RAM 1M X 8 STANDARD SRAM, 45 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| IDT70P3337S233RM IDT70P3337S233RMI IDT70P3337S250R |
1024K/512K x18 SYNCHRONOUS DUAL QDR-II
|
Integrated Device Technology
|
| CY62158EV3009 |
8-Mbit (1024K x 8) Static RAM
|
Cypress Semiconductor
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| IS61LF25672A-6.5B1I IS61LF102418A-7.5TQI IS61LF102 |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
Integrated Silicon Solution, Inc.
SRAM
|
| IS61LF102418A-6.5B2 IS61LF102418A-6.5B2I IS61LF102 |
256K X 72, 512K X 36, 1024K X 18 18MB SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| CY62158DV30L CY62158DV30L-45BVI CY62158DV30L-45ZSX |
8-Mbit (1024K x 8) MoBL Static RAM
|
Cypress Semiconductor
|
| CY14B104MA-ZSP25XI CY14B104KA-ZS25XCT CY14B104KA C |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
512K X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
|
CYPRESS SEMICONDUCTOR CORP
|
| A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T |
240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
